4.8 Article

Two-Carrier Transport Induced Hall Anomaly and Large Tunable Magnetoresistance in Dirac Semimetal Cd3As2 Nanoplates

Journal

ACS NANO
Volume 10, Issue 6, Pages 6020-6028

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsnano.6b01568

Keywords

Dirac semimetal; magnetoresistance; two-band transport; temperature dependence; Hall resistance

Funding

  1. MOST [2013CB934600, 2013CB932602]
  2. NSFC [11274014, 11234001, 11327902]

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Cd3As2 is a model material of Dirac semi metal with a linear dispersion relation along all three directions in the momentum space. The unique band structure of Cd3As2 is made with both Dirac and topological properties. It can be driven into a Weyl semimetal by symmetry breaking or a topological insulator by enhancing the spin orbit coupling. Here we report the temperature 5 and gate voltage-dependent magnetotransport properties of Cd3As2 nanoplates with Fermi level near the Dirac point. The Hall anomaly demonstrates the two-carrier transport accompanied by a transition from n-type to p-type conduction with decreasing temperature. The carrier-type transition is explained by considering the temperature-dependent spin orbit coupling. The magnetoresistance exhibits a large nonsaturating value up to 2000% at high temperatures, which is ascribed to the electron hole compensation in the system. Our results are valuable for understanding the experimental observations related to the two-carrier transport in Dirac/Weyl semimetals, such as Na3Bi, ZrTes, TaAs, NbAs, and HfTes.

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