4.8 Article

An ultrafast symmetry switch in a Weyl semimetal

Journal

NATURE
Volume 565, Issue 7737, Pages 61-+

Publisher

NATURE PUBLISHING GROUP
DOI: 10.1038/s41586-018-0809-4

Keywords

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Funding

  1. US Department of Energy (DOE), Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DE-AC02-76SF00515]
  2. Stanford Linear Accelerator (SLAC) National Accelerator Laboratory
  3. Stanford Institute for Materials and Energy Sciences
  4. Stanford GLAM Postdoctoral Fellowship Program
  5. National Science Foundation (NSF) [DGE-114747]
  6. Gordon and Betty Moore Foundation EPiQS Initiative [GBMF4545]
  7. US Department of Energy [DE-SC0016703, DE-SC0012375]
  8. US Department of Energy, Office of Science, Office of Basic Energy Sciences [2015-SLAC-100238]
  9. DOE Office of Science, Fusion Energy Science [FWP 100182]
  10. Stewardship Science Graduate Fellowship programme [DE-NA0002135]
  11. US Army Research Office MURI [W911NF-11-1-0362]
  12. NSF [NSF/DMR-1157490, NSF/DMR-1644779]
  13. State of Florida
  14. TIMES programme at SLAC
  15. DOE BES SUF Division Accelerator & Detector RD programme
  16. LCLS Facility and SLAC [DE-AC02-76SF00515, DE-AC02-05-CH11231]
  17. U.S. Department of Energy (DOE) [DE-SC0016703] Funding Source: U.S. Department of Energy (DOE)

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Topological quantum materials exhibit fascinating properties(1-3), with important applications for dissipationless electronics and fault-tolerant quantum computers(4,5). Manipulating the topological invariants in these materials would allow the development of topological switching applications analogous to switching of transistors(6). Lattice strain provides the most natural means of tuning these topological invariants because it directly modifies the electron-ion interactions and potentially alters the underlying crystalline symmetry on which the topological properties depend(7-9). However, conventional means of applying strain through heteroepitaxial lattice mismatch(10) and dislocations(11) are not extendable to controllable time-varying protocols, which are required in transistors. Integration into a functional device requires the ability to go beyond the robust, topologically protected properties of materials and to manipulate the topology at high speeds. Here we use crystallographic measurements by relativistic electron diffraction to demonstrate that terahertz light pulses can be used to induce terahertz-frequency interlayer shear strain with large strain amplitude in the Weyl semimetal WTe2, leading to a topologically distinct metastable phase. Separate nonlinear optical measurements indicate that this transition is associated with a symmetry change to a centrosymmetric, topologically trivial phase. We further show that such shear strain provides an ultrafast, energy-efficient way of inducing robust, well separated Weyl points or of annihilating all Weyl points of opposite chirality. This work demonstrates possibilities for ultrafast manipulation of the topological properties of solids and for the development of a topological switch operating at terahertz frequencies.

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