Journal
NANOTECHNOLOGY
Volume 30, Issue 20, Pages -Publisher
IOP Publishing Ltd
DOI: 10.1088/1361-6528/aafcce
Keywords
III-antimonide; nanowire; synthesis; electronics; optoelectronics
Funding
- General Research Fund of the Research Grants Council of Hong Kong SAR, China [CityU 11204614]
- Theme-based Research Scheme of the Research Grants Council of Hong Kong SAR, China [T42-103/16-N]
- National Natural Science Foundation of China [51672229]
- Science Technology and Innovation Committee of Shenzhen Municipality [JCYJ20170818095520778]
- Shenzhen Research Institute, City University of Hong Kong
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The excellent properties of III-V semiconductors make them intriguing candidates for next-generation electronics and optoelectronics. Their nanowire (NW) counterparts further provide interesting geometry and a quantum confinement effect which benefits various applications. Among the many members of all the III-V semiconductors, III-antimonide NWs have attracted significant research interest due to their narrow, direct bandgap and high carrier mobility. However, due to the difficulty of NW fabrication, the development of III-antimonide NWs and their corresponding applications are always a step behind the other III-V semiconductors. Until recent years, because of advances in understanding and fabrication techniques, electronic and optoelectronic devices based on III-antimonide NWs with novel performance have been fabricated. In this review, we will focus on the development of the synthesis of III-antimonide NWs using different techniques and strategies for fine-tuning the crystal structure and composition as well as fabricating their corresponding heterostructures. With such development, the recent progress in the applications of III-antimonide NWs in electronics and optoelectronics is also surveyed. All these discussions provide valuable guidelines for the design of III-antimonide NWs for next-generation device utilization.
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