Journal
NANOTECHNOLOGY
Volume 30, Issue 15, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/aaff74
Keywords
chemically-treated ZnO nanowire; surface defects; memory effect
Funding
- National Research Foundation of Korea (NRF) - Korea government (MSIT
- Ministry of Science and ICT) [2017R1C1B1005076]
- Ministry of Trade, Industry and Energy (MOTIE)
- Korea Institute for Advancement of Technology (KIAT) through the National Innovation Cluster RD program [P0006704]
- National Research Foundation of Korea [2017R1C1B1005076] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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In this study, we demonstrate a transistor-type ZnO nanowire (NW) memory device based on the surface defect states of a rough ZnO NW, which is obtained by introducing facile H2O2 solution treatment. The surface defect states of the ZnO NW are validated by photoluminescence characterisation. A memory device based on the rough ZnO NW exhibits clearly separated bi-stable states (ON and OFF states). A significant current fluctuation does not exist during repetitive endurance cycling test. Stable memory retention characteristics are also achieved at a high temperature of 85 degrees C and at room temperature. The surface-treated ZnO NW device also exhibits dynamically well-responsive pulse switching under a sequential pulse test configuration, thereby indicating its potential practical memory applications. The simple chemical treatment strategy can be widely used for modulating the surface states of diverse low-dimensional materials.
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