Journal
ACS NANO
Volume 10, Issue 2, Pages 2819-2826Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.5b07942
Keywords
molybdenum disulfide; field-effect transistors; inkjet printing; contact resistance; gate-bias stress effect; electronic transport properties
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Funding
- National Creative Research Laboratory program - Korean Ministry of Science, ICT & Future Planning [2012026372]
- Office of Science, Office of Basic Energy Sciences, Material Sciences and Engineering Division of the U.S. Department of Energy [DE-AC02-05CH11231]
- LG Yonam Foundation
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We report the electrical properties of synthesized large-area monolayer molybdenum disulfide (MoS2) field-effect transistors (FETs) with low-cost inkjet-printed Ag electrodes. The monolayer MoS2 film was grown by a chemical vapor deposition (CVD) method, and the top contact Ag source/drain electrodes (S/D) were deposited onto the films using a low-cost drop-on-demand inkjet-printing process without any masks and surface treatments. The electrical characteristics of FETs were comparable to those fabricated by conventional deposition methods such as photo- or electron beam lithography. The contact properties between the S/D and the semiconductor layer were also evaluated using the Y function method and an analysis of the output characteristic at the low drain voltage regimes. Furthermore, the electrical instability under positive gate-bias stress was studied to investigate the charge-trapping mechanism of the FETs. CVD-grown large-area monolayer MoS2 FETs with inkjet-printed contacts may represent an attractive approach for realizing large-area and low-cost thin-film electronics.
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