Journal
NANO LETTERS
Volume 19, Issue 2, Pages 915-920Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.8b04160
Keywords
Mangetic tunnel junction; bistable magnetic states; voltage-controlled switching; 2D magnets; van der Waals heterostructure
Categories
Funding
- Department of Energy, Basic Energy Sciences, Materials Sciences and Engineering Division [DE-SC0018171]
- NSF MRSEC [1719797]
- UW Innovation Award
- DOE BES [DE-SC0012509]
- Croucher Foundation (Croucher Innovation Award)
- RGC of HKSAR [17303518P]
- US Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division
- Elemental Strategy Initiative by the MEXT, Japan
- JSPS KAKENHI [JP15K21722]
- Cottrell Scholar Award
- State of Washington
- Boeing Distinguished Professorship in Physics
- [NSF-DMR-1708419]
- [DE-SC0002197]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1719797] Funding Source: National Science Foundation
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Atomically thin chromium triiodide (CrI3) has recently been identified as a layered antiferromagnetic insulator, in which adjacent ferromagnetic monolayers are antiferromagnetically coupled. This unusual magnetic structure naturally comprises a series of antialigned spin filters, which can be utilized to make spin-filter magnetic tunnel junctions with very large tunneling magnetoresistance (TMR). Here we report voltage control of TMR formed by four-layer CrI3 sandwiched by monolayer graphene contacts in a dual-gated structure. By varying the gate voltages at fixed magnetic field, the device can be switched reversibly between bistable magnetic states with the same net magnetization but drastically different resistance (by a factor of 10 or more). In addition, without switching the state, the TMR can be continuously modulated between 17,000% and 57,000%, due to the combination of spin-dependent tunnel barrier with changing carrier distributions in the graphene contacts. Our work demonstrates new kinds of magnetically moderated transistor action and opens up possibilities for voltage-controlled van der Waals spintronic devices.
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