4.8 Article

Thickness-Dependent and Magnetic-Field-Driven Suppression of Antiferromagnetic Order in Thin V5S8 Single Crystals

Journal

ACS NANO
Volume 10, Issue 6, Pages 5941-5946

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsnano.6b01269

Keywords

V5S8; magnetic layered material; quantum critical point; antiferromagnet; magnetoresistance

Funding

  1. U.S. DOE Office of Science/Basic Energy Sciences [DE-FG02-06ER46337]
  2. AFOSR [FA9550-14-1-0268]
  3. Welch Foundation [C-1716]

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With materials approaching the 2D limit yielding many exciting systems with intriguing physical properties and promising technological functionalities, understanding and engineering magnetic order in nanoscale, layered materials is generating keen interest. One such material is V5S8, a metal with an antiferromagnetic ground state below the Neel temperature T-N similar to 32 K and a prominent spin-flop signature in the magnetoresistance (MR) when H parallel to c similar to 4.2 T. Here we study nanoscale-thickness single crystals of V5S8, focusing on temperatures close to T-N and the evolution of material properties in response to systematic reduction in crystal thickness. Transport measurements just below T-N reveal magnetic hysteresis that we ascribe to a metamagnetic transition, the first-order magnetic-field-driven breakdown of the ordered state. The reduction of crystal thickness to similar to 10 nm coincides with systematic changes in the magnetic response: TN falls, implying that antiferromagnetism is suppressed; and while the spin-flop signature remains, the hysteresis disappears, implying that the metamagnetic transition becomes second order as the thickness approaches the 2D limit. This work demonstrates that single crystals of magnetic materials with nanometer thicknesses are promising systems for future studies of magnetism in reduced dimensionality and quantum phase transitions.

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