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Reply to Comment on 'Metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiOx van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed

ACS NANO (2016)

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Journal

ACS NANO
Volume 10, Issue 2, Pages 1716-1717

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsnano.5b08198

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Categories

Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary

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