4.6 Article

Piezotronic materials and large-scale piezotronics array devices

Journal

MRS BULLETIN
Volume 43, Issue 12, Pages 936-940

Publisher

CAMBRIDGE UNIV PRESS
DOI: 10.1557/mrs.2018.292

Keywords

-

Ask authors/readers for more resources

Third-generation semiconductors, such as ZnO and GaN, exhibit strong piezoelectric polarization due to the lack of inversion symmetry. The piezotronic effect observed in these semiconductors was proposed for tuning carrier transport in electronic devices by utilizing the induced piezoelectric potential as a virtual gate. This novel concept allows effective interactions between micro-/nanoelectronic devices and external mechanical stimuli. Piezotronics provide a promising approach for designing future electronic devices beyond Moore's Law with potential for developing smart sensors, environment monitoring systems, human-machine interaction elements, and other transducers. In this article, we review recent progress in piezotronics using one-dimensional materials, heterojunctions, and large-scale arrays. We provide guidance for future piezotronic devices based on these materials.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available