Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 8, Issue 3, Pages 1661-1666Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.5b08961
Keywords
ZnO; core-shell nanowires; localized excitons; electroluminescence; gan; heterojunction
Funding
- National Natural Science Foundation of China [61204065, 61205193, 61307045, 61404009, 61474010, 61574022, 61504012, 11404219, 11404161, 11574130, 11204224]
- Developing Project of Science and Technology of Jilin Province [20130101026JC]
- fundamental research grant at SUSTC [FRG-SUSTC1501A-43]
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We investigate the electroluminescence (EL) from light emitting diodes (LEDs) of ZnO nanowires/p-GaN structure and ZnS@ZnO core-shell nanowires/p-GaN structure. With the increase of forward bias, the emission peak of ZnO nanowires/p-GaN structure heterojunction shows a blue-shift, while the ZnS@ZnO core shell nanowires/p-GaN structure demonstrates a changing EL emission; the ultraviolet (UV) emission at 378 nm can be observed. This discrepancy is related to the localised states introduced by ZnS particles, which results in a different carrier recombination process near the interfaces of the heterojunction. The localized states capture the carriers in ZnO nanowires and convert them to localived excitons under high forward bias. A strong UV emission due to localized excitons can be observed. Our results indicated that utilizing localized excitons should be a new route toward ZnO-based ultraviolet LEDs with high efficiency.
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