Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 8, Issue 35, Pages 23348-23355Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.6b05424
Keywords
resistive switching memory; perfect order; core-shell; nanostructure array; anodic aluminum oxide
Funding
- MOHESR/DAAD Iraqi German scholarship
- European Research Council [240144]
- BMBF [03Z1MN11, 03Z1M512]
- Deutsche Forschungsgemeinschaft (DFG) [LE 2249_4-1]
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Resistive switching random access memories (RRAM) have attracted great scientific and industrial attention for next generation data storage because of their advantages of nonvolatile properties, high density, low power consumption, fast writing/erasing speed, good endurance, and simple and small operation system. Here, by using a template-assisted technique, we demonstrate a three-dimensional highly ordered vertical RRAM device array with density as high as that of the nanopores of the template (10(8)-10(9) cm(-2)), which can also be fabricated in large area. The high crystallinity of the materials, the large contact area and the intimate semiconductor/electrode interface (3 nm interfacial layer) make the ultralow voltage operation (millivolt magnitude) and ultralow power consumption (picowatt) possible. Our procedure for fabrication of the nanodevice arrays in large area can be used for producing many other different materials and such three-dimensional electronic device arrays with the capability to adjust the device densities can be extended to other applications of the next generation nanodevice technology.
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