Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 8, Issue 46, Pages 31491-31499Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.6b10898
Keywords
electronic structures/processes/mechanisms; photoemission spectroscopy; hybrid materials; photovoltaic devices; band offsets; charge carrier transport
Funding
- US-Israel Binational Science Foundation (Jerusalem)
- National Science Foundation [DMR-1005892]
- U.S. Department of Energy, Office of Energy Efficiency and Renewable Energy, Office of Solar Energy Technology [DE-AC36-08GO28308DOE]
- National Renewable Energy Laboratory (NREL)
- Leona M. & Harry B. Helmsley Charitable Trust
- Israel National Nano-Initiative
- Israel Ministry of Science
- Nancy & Stephen Grand Center for Sensors Security
- NASA Space Technology Research Fellowship
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We investigate the effect of high work function contacts in halide perovskite absorber-based photovoltaic devices. Photoemission spectroscopy measurements reveal that band bending is induced in the absorber by the deposition of the high work function molybdenum trioxide (MoO3). We find that direct contact between MoO3 and the perovskite leads to a chemical reaction, which diminishes device functionality. Introducing an ultrathin spiro-MeOTAD buffer layer prevents the reaction, yet the altered evolution of the energy levels in the methylammonium lead iodide (MAPbI(3)) layer at the interface still negatively impacts device performance.
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