Selective Improvement of NO2 Gas Sensing Behavior in SnO2 Nanowires by Ion-Beam Irradiation

We irradiated SnO2 nanowires with He ions (45 MeV) with different ion fluences. Structure and morphology of the SnO2 nanowires did not undergo noticeable changes upon ion-beam irradiation. Chemical so, equilibrium in SnO2/gas systems was calculated from thermodynamic principles, which were used to study the sensing selectivity of the tested gases, demonstrating the selective sensitivity of the SnO2 surface to NO2 gas. Being different from other gases, including H-2, ethanol, acetone, SO2, and NH3, the sensor response to NO2 gas significantly increases as the ion fluence Acetone increases, showing a maximum under an ion fluence of 1 X 10(16) ions/cm(2). Photoluminescence analysis shows that the relative intensity of the peak at 2.1 eV to the peak at 2.5 eV increases upon ion-beam irradiation, suggesting that structural defects and/or tin interstitials have been generated. X-ray photoelectron spectroscopy indicated that the ionic ratio of Sn2+/Sn4+ increases by the ion-beam irradiation, supporting the formation of surface Sn interstitials. Using thermodynamic calculations, we explained the observed selective sensing behavior. A molecular level model was also established for the adsorption of NO2 on ion-irradiated SnO2 (110) surfaces. We propose that the adsorption of NO2-related species is considerably enhanced by the generation of surface defects that are comprised of Sn interstitials.