Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 8, Issue 11, Pages 7232-7237Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.5b11653
Keywords
hafnium oxides; ultrathin films; ferroelectric switching CMOS integration; ferroelectric tunnel junctions
Funding
- Russian Science Foundation [14-19-01698]
- National Science Foundation (NSF) through the Nebraska Materials Research Science and Engineering Center (MRSEC) [DMR-1420645]
- Nano electronics Research Corporation (NERC) [2398.002]
- Russian Science Foundation [14-19-01698] Funding Source: Russian Science Foundation
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Because of their immense scalability and manufacturabiity potential, the HfO2-based ferroelectric films attract significant attention as strong candidates for application in ferroelectric memories and related electronic devices. Here, we report the ferroelectric behavior of ultrathin Hf0.5Zr0.5O2 films, with the thickness of just 2.5 nm, which makes them suitable for use in ferroelectric tunnel junctions, thereby further expanding the area of their practical application. Transmission electron microscopy and electron diffraction analysis of the films grown on highly doped Si substrates confirms formation of the fully crystalline non-centrosymmetric orthorhombic phase responsible for ferroelectricity in Hf0.5Zr0.5O2. Piezoresponse force microscopy and pulsed switching testing performed on the deposited top TiN electrodes provide further evidence of the ferroelectric behavior of the Hf0.5Zr0.5O2 films. The electronic band lineup at the top TiN/Hf0.5Zr0.5O2 interface and band bending at the adjacent n(+)-Si bottom layer attributed to the polarization charges in Hf0.5Zr0.5O2 have been determined using in situ X-ray photoelectron spectroscopy analysis. The obtained results: represent a significant step toward the experimental implementation of Si-based ferroelectric tunnel junctions.
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