Comparison of spin-on-glass and WO3 as an insulating layer for printed resistive memory devices

Resistive Random Access Memory (ReRAM) is a highly promising technology for various future memory applications. In this work, spin-on-glass (SOG) and WO3 nanoparticles are used as an insulating layer for completely inkjet-printed ReRAM cells. The direct comparison shows that the difference in switching parameters can be used to serve different device requirements for various applications. While local filament formation with conductive atomic force microscopy confirms the same switching mechanism for both compounds, the current-voltage characteristics differ from each other. SOG as excellent insulator shows an OFF resistance in the range of G omega and is therefore highly suitable for multi-bit data storage to increase memory density. ReRAM cells with WO3 face larger leakage currents and show a low degree of multi-bit data storage. However, WO3 can be used to fabricate completely sinter-free memory devices for applications which do not allow high temperatures in the fabrication process.