Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 8, Issue 43, Pages 29642-29648Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.6b09875
Keywords
hexagonal boron nitride; quantum emitters; nanophotonics; 2D materials; ion implantation; defect engineering; luminescence
Funding
- Australian Research Council (ARC) [DP140102721, IH150100028]
- FEI Company
- AOARD [FA2386-15-1-4044]
- ARC [DE130100592]
- Australian Research Council [IH150100028] Funding Source: Australian Research Council
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Hexagonal boron nitride is a wide-band-gap van der Waals material that has recently emerged as a promising platform for quantum photonics experiments. In this work, we study the formation and localization of narrowband quantum emitters in large flakes (up to tens of micrometers wide) of hexagonal boron nitride. The emitters can be activated in as-grown hexagonal boron nitride by electron irradiation or high-temperature annealing, and the emitter formation probability can be increased by ion implantation or focused laser irradiation of the as-grown material. Interestingly, we show that the emitters are always localized at the edges of the flakes, unlike most luminescent point defects in three-dimensional materials. Our results constitute an important step on the roadmap of deploying hexagonal boron nitride in nanophotonics applications.
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