Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 8, Issue 35, Pages 23222-23229Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.6b02933
Keywords
2D semiconductors; SnSe2; WSe2; van der Waals heterostructures; molecular beam epitaxy; tunneling field effect transistors
Funding
- ERC [SMARTGATE-291260]
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van der Waals heterostructures of 2D semiconductor materials can be used to realize a number of (opto)electronic devices including tunneling field effect devices (TFETs). It is shown in this work that high quality SnSe2/WSe2 vdW heterostructure can be grown by molecular beam epitaxy on AlN(0001)/Si(111) substrates using a Bi2Se3 buffer layer. A valence band offset of 0.8 eV matches the energy gap of SnSe2 in such a way that the VB edge of WSe2 and the CB edge of SnSe2 are lined up, making this materials combination suitable for (nearly) broken gap TFETs.
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