Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 8, Issue 45, Pages 31120-31127Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.6b09470
Keywords
piezoMEMS; PZT thin films; nanosheets; microcantilevers; piezoelectric coefficients
Funding
- framework of the Research Program of the Materials innovation institute (M2i) [M62.3.10404]
- Nano-NextNL-a micro and nanotechnology consortium of the Government of The Netherlands and 130 partners
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Ca2Nb3O10 (CNOns) and Ti0.87O2 (TiOns) metal oxide nanosheets (ns) are used as a buffer layer for epitaxial growth of piezoelectric capacitor stacks on Si and Pt/ Ti/SiO2/Si (Pt/Si) substrates. Highly (001)- and (110)-oriented Pb(Zr0.52Ti0.48)O-3 (PZT) films are achieved by utilizing CNOns and TiOns, respectively. The piezoelectric capacitors are characterized by polarization and piezoelectric hysteresis loops and by fatigue measurements. The devices fabricated with SrRuO3 top and bottom electrodes directly on nanosheets/Si have ferroelectric and piezoelectric properties well comparable with devices that use more conventional oxide buffer layers (stacks) such as YSZ, CeO2/YSZ, or SrTiO3 on Si. The devices grown on nanosheets/Pt/Si with Pt top electrodes show significantly improved polarization fatigue properties over those of similar devices grown directly on Pt/Si. The differences in properties are ascribed to differences in the crystalline structures and the density of the films. These results show a route toward the fabrication of single crystal piezoelectric thin films and devices with high quality, long-lifetime piezoelectric capacitor structures on nonperovskite and even noncrystalline substrates such as glass or polished metal surfaces.
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