Journal
LASER PHYSICS
Volume 28, Issue 12, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1555-6611/aae194
Keywords
semiconductor lasers; quantum dot lasers; lasers on silicon
Categories
Funding
- State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications) [IPOC2016ZT01]
- National Natural Science Foundation of China [61674020, 61574019, 61474008]
- International Science & Technology Cooperation Program of China [2011DFR11010]
- 111 Project of China [B07005]
- EPSRC [EP/P006973/1, EP/J012904/1] Funding Source: UKRI
Ask authors/readers for more resources
Taking the optical loss caused by the metamorphic layers into account, we have proposed an optimization strategy for 1.3 mu m InAs/GaAs quantum dot (QD) laser structures directly grown on silicon. We have investigated the effects of the QD layer number, the thickness and the composition of AlGaAs cladding layers on QD laser performance. The results demonstrate, with respect to the net modal gain and the differential quantum efficiency, that the optimized QD layer number is 7 for lasers grown on silicon, which is different from the optimized number of 5 for the counterparts grown on native substrates. The optimized thickness is obtained for the cladding layers of Al0.4Ga0.6As, Al0.6Ga0.4As and Al0.8Ga0.2As. Further, the optimized QD layer number for the net modal gain is nearly independent of the material gain of active regions. More importantly, the optimization strategy provides a comprehensive method to understand the differences in design between QD laser structures on silicon and those on native substrates.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available