Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 8, Issue 48, Pages 32971-32977Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.6b12831
Keywords
vanadium dioxide; n-GaN; memory; device; phase transition modulation; infrared transmission
Funding
- National Basic Research Program of China [2014CB848900]
- National Natural Science Foundation of China [11574279, U1432249, 11474246]
- Fundamental Research Funds for the Central Universities
- research foundation of Key Laboratory of Neutron Physics, China Academy of Engineering Physics [2013BB04]
- Opening Project of Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education [LABKF1401]
- Qing Lan Project, the Natural Science Foundation of Jiangsu Province [BK20160061]
- College Natural Science Research Project of Jiangsu Province [13KJ430007]
- Shanghai Synchrotron Radiation Facility
Ask authors/readers for more resources
In this work, high-quality VO2 epitaxial films were prepared on high-conductivity n-GaN (0001) crystal substrates via an oxide molecular beam epitaxy method. By fabricating a two-terminal VO2/GaN film device, we observed that the infrared transmittance and resistance of VO2 films could be dynamically controlled by an external bias voltage. Based on the hysteretic switching effect of VO2 in infrared range, an optoelectronic memory device was achieved. This memory device was operated under the electrical writing-optical reading mode, which shows promising applications in VO2-based optoelectronic device in the future.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
