Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 8, Issue 4, Pages 2533-2539Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.5b10001
Keywords
self-driven photocurrent; ambipolar behavior; p-n heterojunction; rectification; dissimilar material systems
Funding
- National Natural Science Foundations of China (NSFC) [51331001]
- NSFC [10974037]
- NBRPC [2010CB934102]
- CAS Strategy Pilot program [XDA 09020300]
- Arizona State University Seeding Funding
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Heterostructure engineering of atomically thin two-dimensional materials offers an exciting opportunity to fabricate atomically sharp interfaces for highly tunable electronic and optoelectronic devices. Here, we demonstrate abrupt interface between two completely dissimilar material systems, i.e, GaTe-MoS2 p-n heterojunction transistors, where the resulting device possesses unique electronic properties and self-driven photoelectric characteristics. Fabricated heterostructure transistors exhibit forward biased rectifying behavior where the transport is ambipolar with both electron and hole carriers contributing to the overall transport. Under illumination, photoexcited electronhole pairs are readily separated by large built-in potential formed at the GaTe-MoS2 interface efficiently generating self-driven photocurrent within <10 ms. Overall results suggest that abrupt interfaces between vastly different material systems with different crystal symmetries still allow efficient charge transfer mechanisms at the interface and are attractive for photoswitch, photodetector, and photovoltaic applications because of large built-in potential at the interface.
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