Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 8, Issue 13, Pages 8467-8473Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.6b00255
Keywords
one-atom-thick; graphdiyne; nitrogen-doped; lithium-ion storage; two-dimension-layer
Funding
- 100 Talents program of Chinese Academy of Sciences
- National Basic Research 973 Program of China [2011CB932302, 2012CB932900]
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The elemental N emerged uniformly in graphdiyne (GDY) after heat treatment under NH3 atmosphere to form N-doping GDY. The interplanar N-GDY distance decreased slightly, which may be ascribed to the smaller atom radius of N than C. Compared with GDY, the introduction of N atoms in N-GDY created numerous heteroatomic defects and active sites, thus achieving enhanced electrochemical properties, including higher reversible capacity, improved rate performance, and superior cycling stability. In addition, N-doping might be advantageous to minimize the surface side reactions and form stable interfaces, hence improving the electrochemical cycling stability of N-GDY electrodes. These results indicate N-doping is also an efficient way for improving the electrochemical performance of GDY materials.
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