Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 8, Issue 44, Pages 30336-30343Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.6b09616
Keywords
resistive switching; flexible organic memory; Co9Se8; quantum dots; hybrid nanomaterials
Funding
- National Basic Research Program of China [2012CB933101]
- National Natural Science Foundation of China [11274147, 11674141, 51371093]
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Uniform Co9Se8 quantum dots (CSQDs) were successfully synthesized through a facile solvotherrnal method. The obtained CSQDs with average size of 3.2 +/- 0.1 nm and thickness of 1.8 +/- 0.2 nm were demonstrated good stability and strong fluorescence under UV light after being easily dispersed in both of N,N-dimethylformamide (DMF) and deionized water. We demonstrated the flexible resistive switching memory device based on the hybridization of CSQDs and polyvinylpyrrolidone (PVP) (CSQDs-PVP). The device with the Al/CSQDs-PVP/Pt/poly(ethylene terephthalate) (PET) structure represented excellent switching parameters such as high ON/OFF current ratio, low operating voltages, good stability, and flexibility. The flexible resistive switching memory device based on hybridization of CSQDs and PVP has a great potential to be used in flexible and high-performance memory applications.
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