4.8 Article

Hybrid 0D-2D Nanoheterostructures: In Situ Growth of Amorphous Silver Silicates Dots on g-C3N4 Nanosheets for Full-Spectrum Photocatalysis

Journal

ACS APPLIED MATERIALS & INTERFACES
Volume 8, Issue 51, Pages 35138-35149

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsami.6b09260

Keywords

photocatalysis; 0D-2D; g-C3N4; ultradispersed amorphous silver silicates; interfacial engineering

Funding

  1. NSFC [51672109, 21272236, 11304120, 21225730, 21677146]
  2. Jiangsu Provincial Key Laboratory of Radiation Medicine and Protection
  3. Priority Academic Program Development of Jiangsu Higher Education Institutions
  4. Deanship of Scientific Research (DSR)

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The smaller particle sizes, better dispersion, and more heterojunction interfaces can enhance the photocatalytic performance of photocatalysts. Herein, ultradispersed amorphous silver silicates/ultrathin g-C3N4 nanosheets heterojunction composites (a-AgSiO/CNNS) with intimate interfacial coupling effect were synthesized through the facile in situ precipitation of ultrafine a-AgSiO (similar to 5.2 nm) uniformly dispersed on the entire surface of hierarchical ultrathin CNNS. In this process, the ultrathin CNNS not only perform as the support to form heterostructures but also are employed as dispersant to confine the aggregation of a-AgSiO nanoparticles. Notably, the optimum photocatalytic activity of a-AgSiO/CNNS-500 composite is similar to 36 and 13 times higher than that of CNNS toward the degradation of rhodamine B and tetracycline, respectively. The excellent photocatalytic activity can be attributed to 'the synergistic interactions of heterojunction with strong interfacial coupling effect, improved visible light absorbance, abundant heterojunction interfaces, and fully exposed reactive sites, which originate from the well-defined nanostructures such as uniform packing of the ultrasmall a-AgSiO, the intimate and maximum coupling interfaces between a-AgSiO and CNNS. We believe that such an easy and scalable synthetic strategy can be further extended to the fabrication of other ultrafine semiconductors coupled with g-C3N4 for increasing its photocatalytic performance.

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