Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 8, Issue 9, Pages 6137-6143Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.5b12870
Keywords
piezo-phototronic effect; ZnO/Spiro-MeOTAD heterojunction; ultraviolet photodetector; self-powered; flexible
Funding
- National Major Research Program of China [2013CB932602]
- Program of Introducing Talents of Discipline to Universities [B14003]
- National Natural Science Foundation of China [51527802, 51232001, 51372023]
- Beijing Municipal Science & Technology Commission
- Fundamental Research Funds for Central Universities
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Strain-induced piezoelectric potential (piezopotential) within wurtzite-structured ZnO can engineer the energy band structure at a contact or a junction and, thus, enhance the performance of corresponding optoelectronic devices by effectively tuning the charge carriers' separation and transport. Here, we report the fabrication of a flexible self-powered ZnO/Spiro-MeOTAD hybrid heterojunction ultraviolet photodetector (UV PD). The obtained device has a fast and stable response to the UV light illumination at zero bias. Together with responsivity and detectivity, the photocurrent can be increased about 1-fold upon applying a 0.753% tensile strain. The enhanced performance can be attributed to more efficient separation and transport of photogenerated electron hole pairs, which is favored by the positive piezopotential modulated energy-band structure at the ZnO-Spiro-MeOTAD interface. This study demonstrates a promising approach to optimize the performance of a photodetector made of piezoelectric semiconductor materials through straining.
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