Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 8, Issue 45, Pages 31375-31384Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.6b09036
Keywords
metal assisted chemical etching; c-Si; platinum; cyclic voltammetry; impedance spectroscopy; 2D band bending modeling; Si texturization; cone-shaped macropores
Funding
- French Agence Nationale de la Recherche (ANR) [ANR-14-CE07-0005-01]
- Agence Nationale de la Recherche (ANR) [ANR-14-CE07-0005] Funding Source: Agence Nationale de la Recherche (ANR)
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An in-depth study of metal assisted chemical etching (MACE) of p-type c-Si in HF/H2O2 aqueous solutions using Pt nanoparticles as catalysts is presented. Combination of cyclic voltammetry, open circuit measurements, chronoamperometry, impedance spectroscopy, and 2D band bending modeling of the metal/semiconductor/electrolyte interfaces at the nanoscale and under different etching conditions allows gaining physical insights into this system. Additionally, in an attempt to mimic the etching conditions, the modeling has been performed with a positively biased nanoparticle buried in the Si substrate. Following these findings, the application of an external polarization during etching is introduced as a novel efficient approach for achieving straightforward control of the pore morphology by acting upon the band bending at the Si/electrolyte junction. In this way, nanostructures ranging from straight mesopores to cone-shaped macropores are obtained as the Si sample is biased from negative to positive potentials. Remarkably, macroscopic cone-shaped pores in the 1-5 mu m size range with a high aspect ratio (L/W similar to 1.6) are obtained by this method. This morphology leads to a reduction of the surface reflectance below 5% over the entire VIS-NIR domain, which outperforms macrostructures made by state of the art texturization techniques for Si solar cells.
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