Journal
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
Volume 39, Issue 4, Pages 1116-1121Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.jeurceramsoc.2018.11.039
Keywords
Sol-gel process; BST/CCTO multilayers; Microstructure; Interfacial polarization; Giant dielectric permittivity
Categories
Funding
- National Natural Science Foundation of China [61405159]
- Natural Science Foundation of Shaanxi Province [2018JM5034]
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Ba0.5Sr0.5TiO3/CaCu3Ti4O12 (BST/CCTO) multilayers with different stack sequences were deposited on LaNiO3(LNO)/SiO2/Si substrates by a soy-gel process. The dielectric properties of BST/CCTO multilayers are significantly affected by the deposition sequence, the layer thickness and the impurities, effects that are interpreted using the Maxwell-Wagner interfacial polarization model. Impurities are generated by elemental inter-diffusion at the interfaces of BST/CCTO, and less at the interfaces of BST/LNO and CCTO/LNO. The dielectric permittivity of the CCTO/BST/LNO/SiO2/Si sample reaches 352,200 at 10 kHz, and stabilizes above 20,000 in the range of 100 kHz to 1 MHz. This work demonstrates an effective approach to enhance dielectric properties for film capacitor applications by constructing multilayers with specific deposition sequences and layer thicknesses.
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