4.8 Article

Intensive Plasmonic Flash Light Sintering of Copper Nanoinks Using a Band-Pass Light Filter for Highly Electrically Conductive Electrodes in Printed Electronics

Journal

ACS APPLIED MATERIALS & INTERFACES
Volume 8, Issue 13, Pages 8591-8599

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsami.5b12516

Keywords

copper nanoparticle; flash light sintering; intensive plasmonic; optical filter; band-pass filter; wavelength range; printed electronics

Funding

  1. National Research Foundation of Korea (NRF)
  2. Ministry of Education [2015R1D1A1A09058418]
  3. Technology Innovation Program - Ministry of Trade, Industry, & Energy (MI, Korea) [10048913]
  4. Nano-Convergence Foundation - Ministry of Science, ICT, and Future Planning (MSIP, Korea)
  5. Ministry of Trade, Industry, and Energy (MOTIE, Korea) [R201502510]
  6. Korea Evaluation Institute of Industrial Technology (KEIT) [10048913, R201502510] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
  7. National Research Foundation of Korea [R201601510, 2015R1D1A1A09058418] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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In this work, an intensive plasmonic flash light sintering technique was developed by using a band-pass light filter matching the plasmonic wavelength of the copper nanoparticles. The sintering characteristics, such as resistivity and microstructure, of the copper nanoink films were studied as a function of the range of the wavelength employed in the flash white light sintering. The flash white light irradiation conditions (e.g., wavelength range, irradiation energy, pulse number, on-time, and off-time) were optimized to obtain a high conductivity of the copper nanoink films without causing damage to the polyimide substrate. The wavelength range corresponding to the plasmonic wavelength of the copper nanoparticles could efficiently sinter the copper nanoink and enhance its conductivity. Ultimately, the sintered copper nanoink films under optimal light sintering conditions showed the lowest resistivity (6.97 mu Omega.cm), which was only 4.1 times higher than that of bulk copper films (1.68 mu Omega.cm)

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