Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 8, Issue 11, Pages 7349-7355Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.5b12056
Keywords
helium ion microscopy; atomic force microscopy; layered materials; ferroelectricity; 2D crystals
Funding
- Scientific User Facilities Division, Office of Basic Energy Sciences, U.S. Department of Energy
- Laboratory Directed Research and Development Program of Oak Ridge National Laboratory
- U.S. Government [DE-AC05-00OR22725]
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Rapid advances in nanoscience rely on continuous improvements of material manipulation at near atomic scales. Currently, the workhorse of nanofabrication is resist-based lithography and its various derivatives. However, the use of local electron, ion, and physical probe methods is expanding, driven largely by the need for fabrication without the multistep preparation processes that can result in contamination from resists and solvents. Furthermore, probe based methods extend beyond nanofabrication to nano manipulation and to imaging which are all vital for a rapid transition to the prototyping and testing of devices. In this work we study helium ion interactions with the surface of bulk copper indium thiophosphate (CuMP2X6)-P-III (M = Cr, In; X = S, Se), a novel layered 2D material, with a Helium Ion Microscope (HIM). Using this technique, we are able to control ferrielectric domains and, grow conical nanostructures with enhanced conductivity whose material volumes scale with the beam dosage. Compared to the copper indium thiophosphate (CITP) from which they grow, the nanostructures are oxygen rich, sulfur poor, and with virtually unchanged copper concentration as confirmed by energy-dispersive X-ray spectroscopy (EDX). Scanning electron microscopy (SEM) imaging contrast as well as scanning microwave microscopy (SMM) measurements suggest enhanced conductivity in the formed particles, whereas atomic force microscopy (AFM) measurements indicate that the produced structures have lower dissipation and are softer as compared to the CITP.
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