4.8 Article

Unraveling the Impact of Halide Mixing on Perovskite Stability

Journal

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Volume 141, Issue 8, Pages 3515-3523

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/jacs.8b11210

Keywords

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Funding

  1. Energy Materials and Surface Sciences Unit of the Okinawa Institute of Science and Technology Graduate University
  2. GIST R&D Cluster Research Program
  3. GIST Proof of Concept (POC) Program
  4. JSPS KAKENHI [JP18K05266]
  5. Center for Hybrid Organic Inorganic Semiconductors for Energy (CHOISE), an Energy Frontier Research Center - Office of Basic Energy Sciences, Office of Science within the US Department of Energy
  6. Office of Science of the U.S. Department of Energy [DE-AC02-05CH11231]
  7. CERCA Program/Generalitat de Catalunya
  8. Severo Ochoa program from Spanish MINECO [SEV-2017-0706]

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Increasing the stability of perovskites is essential for their integration in commercial photovoltaic devices. Halide mixing is suggested as a powerful strategy toward stable perovskite materials. However, the stabilizing effect of the halides critically depends on their distribution in the mixed compound, a topic that is currently under intense debate. Here we successfully determine the exact location of the I and Cl anions in the CH3NH3PbBr3-yIy and CH3NH3PbBr3-zClz mixed halide perovskite lattices and correlate it with the enhanced stability we find for the latter. By combining scanning tunneling microscopy and density functional theory, we predict that, for low ratios, iodine and chlorine incorporation have different effects on the electronic properties and stability of the CH3NH3PbBr3 perovskite material. In addition, we determine the optimal Cl incorporation ratio for stability increase without detrimental band gap modification, providing an important direction for the fabrication of stable perovskite devices. The increased material stability induced by chlorine incorporation is verified by performing photoelectron spectroscopy on a half-cell device architecture. Our findings provide an answer to the current debate on halide incorporation and demonstrate their direct influence on device stability.

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