Journal
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Volume 141, Issue 1, Pages 104-108Publisher
AMER CHEMICAL SOC
DOI: 10.1021/jacs.8b11483
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Funding
- Australian Research Council (ARC) under The ARC Center of Excellence [FLEET - CE170100039, DP180102752, FL180100053]
- Australian Government Research Training Program Scholarship scheme
- RMIT University
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We report the synthesis of centimeter sized ultrathin GaN and InN. The synthesis relies on the ammonolysis of liquid metal derived two-dimensional (2D) oxide sheets that were squeeze-transferred onto desired substrates. Wurtzite GaN nanosheets featured typical thicknesses of 1.3 nm, an optical bandgap of 3.5 eV and a carrier mobility of 21.5 cm(2) V-1 s(-1), while the InN featured a thickness of 2.0 nm. The deposited nanosheets were highly crystalline, grew along the (001) direction and featured a thickness of only three unit cells. The method provides a scalable approach for the integration of 2D morphologies of industrially important semiconductors into emerging electronics and optical devices.
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