Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 8, Issue 40, Pages 26948-26955Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.6b09592
Keywords
nanoheteroepitaxy; monolithic integration; III-V compounds; graphene; rectification
Funding
- Deutsche Forschungsgemeinschaft (DFG) under DACH project [SCHR 1123/10-1]
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The epitaxial integration of highly heterogeneous material systems with silicon (Si) is a central topic in (opto-)electronics owing to device applications. InP could open new avenues for the realization of novel devices such as high-mobility transistors in next-generation CMOS or efficient lasers in Si photonics circuitry. However, the InP/Si heteroepitaxy is highly challenging due to the lattice (similar to 8%), thermal expansion mismatch (similar to 84%), and the different lattice symmetries. Here, we demonstrate the growth of InP nanocrystals showing high structural quality and excellent optoelectronic properties on Si. Our CMOS-compatible innovative approach exploits the selective epitaxy of InP nanocrystals on Si nanometric seeds obtained by the opening of lattice-arranged Si nanotips embedded in a SiO2 matrix. A graphene/InP/Si-tip heterostructure was realized on obtained materials, revealing rectifying behavior and promising photodetection. This work presents a significant advance toward the monolithic integration of graphene/III-V based hybrid devices onto the mainstream Si technology platform.
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