Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 8, Issue 16, Pages 10436-10442Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.6b02847
Keywords
organic field effect transistor; gate dielectric; STO; low voltage OFET; flexible OFET
Funding
- CSIR, India
- DST, Govt. of India
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We report that the pervoskite material, strontium titanate (STO) can be used as a gate dielectric layer of flexible and low voltage organic field effect transistor (OFET). The crystallinity, dielectric constant, and surface morphology of STO films can be controlled by the engineering of the growth condition. Under optimized growth condition, amorphous films of STO show a much better gate dielectric compared to other gate dielectrics used to date, with very small leakage current density for flexible and low voltage (<5 V) OFETs. The amorphous STO film decreases the interface trap density at organic/dielectric interface substantially. Pentacene transistors with amorphous STO gate dielectric show high mobility of 2 cm(2)/(V s), on/off ratio of 10(6), subthreshold swing of 0.3 V/dec and low interface trap density. Similarly excellent performance has been obtained in copper phthalocyanine (CuPc) based OFETs with on/off ratio, similar to 10(5) and carrier mobility, similar to 5.9 X 10(-2) cm(2)/(V s). Moreover, the operating voltage (similar to 5 V) has been reduced by more than one order of magnitude. It has been demonstrated that the low processing temperature of amorphous STO makes it the most suitable gate dielectric for flexible and transparent organic devices to operate under low voltage.
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