Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 8, Issue 6, Pages 3977-3984Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.5b11265
Keywords
magnetization reversal; multiferroic heterosutructures; magnetoelectric coupling effect; bismuth ferrite; zinc oxide films
Funding
- National Natural Science Foundation of China [51272174, 11434006]
- Natural Science Foundation of Tianjin City [13JCZDJC32800]
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Electric field induced reversible switchings of the magnetization and resistance were achieved at room temperature in epitaxial Mn:ZnO(110)/BiFeO3(001) heterostructures. The observed modulation of magnetic moment is similar to 500% accompanying with a coercive field varying from 43 to 300 Oe and a resistive switching ratio up to similar to 10(4)% with the applied voltages of +/- 4 V. The switching mechanisms in magnetization and resistance are attributed to the ferroelectric polarization reversal of the BiFeO3 layer under applied electric fields, combined with the reversible change of oxygen vacancy concentration at the Mn:ZnO/BiFeO3 interface.
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