Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 52, Issue 8, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6463/aaf37c
Keywords
spin injection; spin transport; semiconductor spintronics
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Funding
- Japan Society for the Promotion of Science (JSPS) [16H02333]
- Ministry of Education, Culture, Sports, Science, and Technology (MEXT) [26103002, 26103003]
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We show evident crystal orientation effect on pure spin current transport in Si-based lateral spin-valve (LSV) devices with epitaxially grown CoFe/MgO tunnel contacts. When we compare nonlocal spin signals between LSV devices along < 1 0 0 > (Si < 1 0 0 >) and < 1 1 0 > (Si < 1 1 0 >), we find that the magnitude of the spin signals for Si < 100 > LSV devices is always larger than that for Si < 1 1 0 > LSV devices. The analyses based on the one-dimensional spin diffusion model reveal that the spin diffusion length and spin lifetime between Si < 1 0 0 > and Si < 1 1 0 > LSV devices are comparable, while the spin injection/detection efficiency in Si < 1 0 0 > LSV devices is evidently larger than that in Si < 1 1 0 > ones. Possible origins of the difference in the spin injection/detection efficiency between Si < 1 0 0 > and Si < 1 1 0 > LSV devices are discussed.
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