Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 52, Issue 7, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6463/aaf4c7
Keywords
bismuth telluride; resistive switching; flexible memory; nonvolatile; filtration transfer
Categories
Funding
- National Natural Science Foundation of China [51772255]
- Hunan Natural Science Foundation [2016JJ3123]
- Undergraduate Experimental Teaching Reform Foundation from School of physics and optoelectronics
Ask authors/readers for more resources
Flexible nonvolatile resistive switching memory is a promising candidate for next generation storage technologies. Exploring new materials is of crucial importance to achieve further performances of flexible nonvolatile resistive switching memory. In this work, topological insulator bismuth telluride (Bi2Te3) nanosheets films were introduced into resistive switching memory devices firstly, a typical sandwich construction of Ag/Bi2Te3/indium tin oxide/polyethylene terephthalate with good flexibility, which exhibits nonvolatile bipolar resistive switching characteristics of operation voltage, good mechanical flexibility, and good storage stability. Furthermore, trap-controlled space charge limited current, thermionic emission are the dominant conduction mechanisms in the carrier transport. This work will provide an opportunity for Bi2Te3 nanosheets to be used in flexible electronics application.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available