Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 9, Issue 1, Pages 693-700Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.6b12508
Keywords
atomically precise graphene nanoribbons; chlorosulfonic acid; self-assembly; bottom-up synthesis; thin films; field-effect transistors
Funding
- Office of Naval Research (ONR)
- National Science Foundation (NSF) [CHE-1455330]
- NSF [EEC-1449548, ECCS-1542182]
- Nebraska Research Initiative
- Ministry of Education and Science of the Russian Federation
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Because of their intriguing electronic and optical properties, atomically precise graphene nanoribbons (GNRs) are considered to be promising materials for electronics and photovoltaics. However, significant aggregation and low solubility of GNRs in conventional solvents result in their poor processability for materials characterization and device studies. In this paper, we demonstrate a new fabrication approach for large-scale uniform thin films of nonfunctionalized atomically precise chevron-type GNRs. The method is based on (1) the exceptional solubility of graphitic materials in chlorosulfonic acid and (2) the original interfacial self assembly approach by which uniform films that are single-GNR (similar to 2 nm) thick can be routinely prepared. These films can be transferred to various substrates including Si/SiO2 and used for the streamlined fabrication of arrays of GNR-based devices. The described self-assembly approach should be applicable to other types of solution-synthesized atomically precise GNRs as well as large polyaromatic hydrocarbon (PAH) molecules and therefore should facilitate and streamline their device characterization.
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