Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 8, Issue 47, Pages 32432-32439Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.6b11149
Keywords
n-channel transistor; pentacene field-effect transistor; n-type molecular doping; ambipolar transistor; Zener tunneling; minority currents
Funding
- Higher Committee For Education Development in Iraq
- Kent State University
- Binational Science Foundation [2014396]
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Doping allows us to control the majority and minority charge carrier concentration in organic field-effect transistors. However, the precise mechanism of minority charge carrier generation and transport in organic semiconductors is largely unknown. Here, the injection of minority charge carriers into n-doped organic field-effect transistors is studied. It is shown that holes can be efficiently injected into the transistor channel via Zener tunneling inside the intrinsic pentacene layer underneath the drain electrode. Moreover, it is shown that the onset of minority (hole) conduction is shifted by lightly n-doping the channel region of the transistor. This behavior can be explained by a large voltage that has to be applied to the gate in order to fully deplete the n-doped layer as well as an increase in hole trapping by inactive dopants.
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