Journal
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume 29, Issue 23, Pages 20010-20016Publisher
SPRINGER
DOI: 10.1007/s10854-018-0131-9
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Funding
- CRC program
- Natural Sciences and Engineering Research Council of Canada (NSERC) Discovery Grant program [RGPIN-2015-06004]
- Canada Foundation for Innovation (CFI) [212442]
- Science without Borders from the National Council of Technological and Scientific Developments (CNPq) [471359/2013-0]
- Coordination for the Improvement of Higher Education Personnel (CAPES)
- PNPD/CAPES
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In this article, the effect of phenyl-C-61-butyric acid methyl ester (PCBM) layer on the electrical performance of field-effect transistors (FETs) based on antimony-doped tin dioxide (Sb:SnO2) is reported. PCBM is a soluble variety of fullerene, n-type organic semiconductor, known to promote the p-type doping of semiconducting materials such as diamond and graphene, via charge transfer. Sb:SnO2 is an emerging low-cost transparent oxide semiconductor material that exhibits strong unipolar behavior (n-type). Ambipolar character in tin dioxide normally is not observed, however in this study we find that the deposition of PCBM on top of Sb:SnO2 promotes ambipolar behavior in Sb:SnO2 FETs. At negative gate bias (V-G<0) PCBM traps free electrons from the conduction band of SnO2 and from Sb donors, thus downshifting the Sb:SnO2 Fermi level (E-F), leading to a strong injection of holes in the valence band of Sb:SnO2. The p-type carrier concentration increases up to 8.6x10(11)cm(-2). Our results suggest that PCBM deposition decreases the current in the accumulation mode of electrons due to electron mobility decrease at V-G>0, and enhances the current in inversion mode. Besides, PCBM deposition also results in an increase of hole mobility at V-G<0.
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