Related references
Note: Only part of the references are listed.Effects of Annealing Treatments on the Properties of Al/Ti/p-GaN Interfaces for Normally OFF p-GaN HEMTs
Giuseppe Greco et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2016)
Barrier height inhomogeneity and its impact on (Al, In, Ga)N Schottky diodes
Matthew A. Laurent et al.
JOURNAL OF APPLIED PHYSICS (2016)
Effect of rapid thermal annealing on barrier height and 1/f noise of Ni/GaN Schottky barrier diodes
Ashutosh Kumar et al.
APPLIED PHYSICS LETTERS (2015)
Impact of Gate Metal on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors
Finella Lee et al.
IEEE ELECTRON DEVICE LETTERS (2015)
Current transport mechanisms in lattice-matched Pt/Au-InAlN/GaN Schottky diodes
Jian Ren et al.
JOURNAL OF APPLIED PHYSICS (2015)
Effect of thermal annealing on electrical and structural properties of Ni/Au/n-GaN Schottky contacts
A. Akkaya et al.
MICROELECTRONIC ENGINEERING (2014)
Electrical Characteristics of Pt Schottky Contacts on AlInN:Mg/GaN Heterostructures
Seongjun Kim et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2013)
Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers
Benjamin Reuters et al.
JOURNAL OF ELECTRONIC MATERIALS (2013)
Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements
S. Karboyan et al.
MICROELECTRONICS RELIABILITY (2013)
Barrier characteristics of Pt/Ru Schottky contacts on n-type GaN based on I-V-T and C-V-T measurements
N. Nanda Kumar Reddy et al.
BULLETIN OF MATERIALS SCIENCE (2012)
Investigation of the inhomogeneous barrier height of an Au/Bi4Ti3O12/n-Si structure through Gaussian distribution of barrier height
M. Gokcen et al.
CHINESE PHYSICS B (2012)
A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs
Raymond S. Pengelly et al.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES (2012)
Growth Studies on Quaternary AlInGaN Layers for HEMT Application
Benjamin Reuters et al.
JOURNAL OF ELECTRONIC MATERIALS (2012)
220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs
Ronghua Wang et al.
IEEE ELECTRON DEVICE LETTERS (2011)
Growth mechanism of vertical compositional inhomogeneities in AlInN films
S. Zhang et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2011)
Electrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructures
Engin Arslan et al.
MICROELECTRONICS RELIABILITY (2011)
Performance comparison of Pt/Au and Ni/Au Schottky contacts on AlxGa1-x N/GaN heterostructures at high temperatures
Lin Fang et al.
CHINESE PHYSICS B (2010)
GaN-Based Submicrometer HEMTs With Lattice-Matched InAlGaN Barrier Grown by MBE
T. Lim et al.
IEEE ELECTRON DEVICE LETTERS (2010)
Study on quaternary AlInGaN/GaN HFETs grown on sapphire substrates
N. Ketteniss et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2010)
Dislocation-governed current-transport mechanism in (Ni/Au)-AlGaN/AlN/GaN heterostructures
Engin Arslan et al.
JOURNAL OF APPLIED PHYSICS (2009)
Effects of thermal annealing on the electrical and structural properties of Pt/Mo Schottky contacts on n-type GaN
Varra Rajagopal Reddy et al.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS (2009)
Tunneling current via dislocations in Schottky diodes on AlInN/AlN/GaN heterostructures
Engin Arslan et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2009)
Thermal annealing behaviour on Schottky barrier parameters and structural properties of Au contacts to n-type GaN
K. Jagadeswara Reddy et al.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS (2008)
Al composition dependent properties of quaternary AlInGaN Schottky diodes
Y. Liu et al.
JOURNAL OF APPLIED PHYSICS (2006)
Annealing and measurement temperature dependence of W2B5-based rectifying contacts to n-GaN
Rohit Khanna et al.
APPLIED SURFACE SCIENCE (2006)
Thermally stable Schottky contacts on n-type GaN using ZrB2
TN Oder et al.
APPLIED PHYSICS LETTERS (2006)
Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes
H Hirayama
JOURNAL OF APPLIED PHYSICS (2005)
Near-ideal Schottky contact on quaternary AlInGaN epilayer lattice-matched with GaN
Y Liu et al.
APPLIED PHYSICS LETTERS (2004)
Thermal annealing effects on Ni/Au based Schottky contacts on n-GaN and AlGaN/GaN with insertion of high work function metal
N Miura et al.
SOLID-STATE ELECTRONICS (2004)
Thermal annealing behaviour of Pt on n-GaN Schottky contacts
J Wang et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2003)
Correlation between barrier heights and ideality factors of Cd/n-Si and Cd/p-Si Schottky barrier diodes
K Akkiliç et al.
SOLID STATE COMMUNICATIONS (2003)
Thermal stability of Pt- and Ni-based Schottky contacts on GaN and Al0.3Ga0.69N
E Monroy et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2002)
Effects of annealing on Ti, Pd, and Ni/n-A10.11Ga0.89N Schottky diodes
S Arulkumaran et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2001)
Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors
SL Rumyantsev et al.
JOURNAL OF APPLIED PHYSICS (2000)
Share Paper
