Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 57, Issue 12, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/JJAP.57.125701
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Funding
- JSPS [18H03770, 18H03873]
- HPCI System Research project [hp180227]
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We report the density-functional calculations that systematically clarify the stable forms of carbon-related defects and their energy levels in amorphous SiO2 using the melt-quench technique in molecular dynamics. Considering the position dependence of the O chemical potential near and far from the SIC/SiO(2 )interface, we determine the most abundant forms of carbon-related defects: Far from the interface, the CO2 or CO in the internal space in SiO2 is abundant and they are electronically inactive; near the interface, the carbon clustering is likely and a particular monocarbon defect and a di-carbon defect induce energy levels near the SiC conduction-band bottom, thus being candidates for the carrier traps. (C) 2018 The Japan Society of Applied Physics
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