Hydrogen storage properties of magnesium nanotrees investigated by a quartz crystal microbalance system

We report enhanced low temperature hydrogen storage properties of magnesium nanotrees fabricated by glancing angle deposition (GLAD) method. The arrays of nanotrees and conventional thin films of elemental Mg have been deposited directly onto gold coated unpolished quartz crystal substrates. Mg nanotrees were about 15 mu m in height, 10 mu m by 1 mu m in lateral size, and were composed of nanoleaves of about 20 nm in thickness, 2 mu m length, and 1 mu m width. Hydrogen absorption and desorption properties of Mg nanotrees and thin films were investigated using a quartz crystal microbalance (QCM) testing system that is capable of measuring weight changes with a nanogram sensitivity. QCM absorption tests were performed at temperatures 100, 200, and 300 degrees C under 30 bars of H-2 pressure. Measurements revealed that Mg nanotrees can absorb hydrogen at significantly higher weight percentage (wt%) and faster rates compared to conventional Mg films under similar conditions. Hydrogen storage of Mg thin film was observed to be at 0.02, 0.30 and 3.91 wt% (weight percentage), while it reached to 1.26, 3.75, and 5.86 wt% for nanotrees at temperatures 100, 200, and 300 degrees C, respectively, after 150 min. In addition, the results of desorption experiments show that Mg nanotrees can start to release hydrogen at temperatures as low as 100 degrees C at a rate of 0.11 wt% (vs. 0.01 wt% for thin film at the same temperature) with desorption rates reaching to 1.05 wt% at 200 degrees C (0.26 wt% for thin film) and 2.57 wt% at 300 degrees C (1.45 wt% for thin film), which are considerably lower desorption temperatures compared to previously reported values for bulk Mg (>300 degrees C). The enhancement in hydrogen absorption and desorption properties of Mg nanotrees is believed to originate from their thin and isolated nanoleaves that also have an improved oxidation resistance property. (C) 2018 Hydrogen Energy Publications LLC. Published by Elsevier Ltd. All rights reserved.