The opportunity of using InGaAsN/AlGaAs quantum wells for extended short-wavelength infrared photodetection

We propose and demonstrate a novel concept to address high-performance, extended short wavelength (e-SWIR) photodetectors. Our approach is based on shifting the well-developed GaAs quantum-well infrared photodetector (QWIP) technology to e-SWIR wavelengths. In order to increase the available conduction band offsets (CBOs), we suggest incorporating nitrogen (N) atoms into the quantum well material. The incorporation of N atoms into In Vs results in dilute-nitride highly mismatched alloys with lower bandgaps and higher CBOs. In our work, we demonstrate CBO values reaching up to similar to 1 eV in InGaAsN/AlGaAs QWIPs. This large CBO makes these structures suitable for e-SWIR detection. The large CBO reduces the dark current dramatically and allows efficient detection at room temperature. In our study, we devised two similar InGaAsN/AlGaAs QWIP devices with twofold, 1% and 2% N composition. Based on the measured dark current data, we extracted activation energy barriers of 780 meV and 580 meV for the 1% and 2% N devices, respectively. The dark current and photocurrent spectral response behave in correlation to the change in the barriers' height. The photocurrent response of the 1% N device peaks at similar to 2.25 mu m and spans at a spectral range between 1.3 and 2.95 mu m. The photocurrent response of the 2% N device is blue shifted to similar to 1.42 mu m and spans at a spectral range between 1.1 and 2.2 mu m. The 2% N device exhibits lower dark currents and a strong photoresponse at room temperature, whereas the 1% N device exhibits a clear response only at temperatures below 150 K. The detection mechanism in the InGaAsN/AlGaAs QWIP devices is based on optical excitation of carriers from the quantum wells into highly-localized nitrogen-related E+ defect-like states located energetically above the conduction band edge. For this reason, the photoresponse is insensitive to the radiation polarization and exhibits low absorption efficiency on the order of 0.15% per quantum well. However, at the same time, the responsivity and photocurrent gain are very high due to the long lifetime of the highly localized excited states. The peak responsivity of the 2% N device is similar to 70 A/W at room temperature. Significant responsivity is also available at the response tail at longer wavelengths, i.e., similar to 15 and 1 A/W for 1.65 mu m-the peak wavelength of the night glow emission and 2 mu m-at the e-SWIR wavelengths, respectively. Corresponding detectivity values are similar to 10(10) and similar to 5 x 10(8) cm.Hz(1/2)/W at 1.65 mu m and 2.0 mu m, respectively. These values are similar to those of other developing technologies. In-reach potential detectivity is estimated based on the measured data and can arrive easily to values as high as similar to 2 x 10(12) and similar to 1 x 10(11) cm.Hz(1/2)/W for similar to 1.65 mu m and 2.0 mu m, respectively. The presented characteristics and potential performance indicate that InGaAsN/AlGaAs quantum wells are most suitable for efficient e-SWIR photodetection.