Research of Single-Event Burnout in 4H-SiC JBS Diode by Low Carrier Lifetime Control

This paper presents the 2-D numerical simulation results of single-event burnout (SEB) in 4H-SiC junction barrier Schottky (JBS) diode by low carrier lifetime control (LCLC) for the first time. We investigate the SEB performance based on an 1800-V JBS structure and find that the most sensitive ion's strike position is the middle of junction spacing because of the punchthrough of the electric field at anode contact. Then, the SEB hardening mechanism of LCLC is studied in this paper that the double-sided peak electric field can be effectively improved which results in a significantly decrease of maximal temperature. For the incident particlewith different linear energy transfer values, we find that the SEB threshold voltage can be substantially enhanced when the carrier lifetime (tau) is under a certain value. In addition, the basic characteristics with LCLC are discussed that the forward and reversed characteristics are hardly affected.