4.5 Article

A nonvolatile organic resistive switching memory based on lotus leaves

Journal

CHEMICAL PHYSICS
Volume 516, Issue -, Pages 168-174

Publisher

ELSEVIER SCIENCE BV
DOI: 10.1016/j.chemphys.2018.09.008

Keywords

Lotus leaves; Organic memory; Resistive switching; Biodegradable; Bio-RRAM

Funding

  1. National Key Research and Development Plan [SQ2017YFE030073]
  2. National Natural Science Foundation of China [11604270, 11704050]
  3. Fundamental Research Funds for the Central Universities [2017X02012, 2018GF08]

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The resistance random access memory (RRAM) based on biomaterials, which has the advantages of sustainable, green and environment-friendly, has great potential application in the sustainable electronic devices. Herein, lotus leaves, a very common aquatic herb serve as a dielectric layer, was used to prepare an organic resistive switching memory device with Ag/Lotus leaves/ITO structure for the first time. The biodegradable electronic device demonstrates a nonvolatile resistive switching memory behavior with large resistance ratio and long switching endurance at room temperature. This work exhibits the application prospect of the biomaterials in electronics with the biodegradability and biocompatibility, which provide an effective supplement to the research of organic bio-RRAM.

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