Journal
APPLIED SURFACE SCIENCE
Volume 463, Issue -, Pages 947-952Publisher
ELSEVIER
DOI: 10.1016/j.apsusc.2018.09.022
Keywords
MoS2-rGO; Resistive switching; Flexible; Low operating voltage; Multilevel storage
Categories
Funding
- National Natural Science Foundation of China [11474151, 11774156, 11574071]
- National Key Project for Basic Research [2012CB932304]
- PAPD, People's Republic of China
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With the growing demand for wearable electronic devices in recent years, flexible memory devices have attracted great interest among researchers. Here we report a flexible resistive memory device based on a hybrid of MoS2 and reduced graphene oxide (rGO). The device shows not only a low operating voltage (about 0.4 V), but also multilevel states by controlling the compliance current. In addition, it exhibits long retention time, high repeatability, and bending endurance. Further analysis indicates that the resistive-switching phenomenon can be attributed to the effect of electron trapping and de-trapping in the MoS2-rGO heterojunction. Our findings suggest that the MoS2-rGO hybrid has the potential to be applied in flexible, low-power, and high-density nonvolatile memory.
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