First principles study of hBN-AlN short-period superlattice heterostructures

We report a theoretical study of the structural, electronic, and optical properties of hBN-AlN superlattice (SL) heterostructures using a first-principles approach based on standard and hybrid density functional theory. We consider a short-period (L < 10 nm) SI, and find that its properties depend strongly on the AlN layer thickness L-AlN. For L-AlN less than or similar to 1 nm, AlN stabilizes into the hexagonal phase and the SL displays insulating behavior with type II interface band alignment and optical gaps as small as 5.2 eV. The wurtzite phase is formed for thicker AlN layers. In these cases, built-in electric fields lead to the formation of polarization compensating charges as well as two-dimensional conductive behavior for electronic transport along interfaces. We also find defect-like states localized at interfaces which are optically active in the visible range. Published under license by AIP Publishing.