Journal
APPLIED PHYSICS LETTERS
Volume 114, Issue 1, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5058714
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- Defense Advanced Research Projects Agency, Army Research Office [W911NF-16-1-0410]
- Army Research Office [W911NF-18-1-0402]
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We report the growth and characterization of mid-wavelength infrared type-II InAs/InAs1-xSx superlattice photodiodes on GaSb substrates grown by metal-organic chemical vapor deposition. At 150 K, the 50% cut-off wavelength is 5.0 mu m, the dark current density is 3.3 x 10(-4) A/cm(2) under -20 my bias, and the peak responsivity is 1.76 A/W corresponding to a quantum efficiency of 55% without anti-reflection coating. A specific detectivity of 1.2 x 10(11)cm Hz(1/2)/W is achieved at 4.0 mu m under -20 mV bias at 150 K. Published under license by AIP Publishing.
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