Related references
Note: Only part of the references are listed.Iron and intrinsic deep level states in Ga2O3
M. E. Ingebrigtsen et al.
APPLIED PHYSICS LETTERS (2018)
Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage > 1 kV
Zongyang Hu et al.
IEEE ELECTRON DEVICE LETTERS (2018)
Characterizations of the nonlinear optical properties for (010) and ((2)over-bar01) beta-phase gallium oxide
Hong Chen et al.
OPTICS EXPRESS (2018)
A review of Ga2O3 materials, processing, and devices
S. J. Pearton et al.
APPLIED PHYSICS REVIEWS (2018)
Donors and deep acceptors in beta-Ga2O3
Adam T. Neal et al.
APPLIED PHYSICS LETTERS (2018)
Ultrafast carrier thermalization in lead iodide perovskite probed with two-dimensional electronic spectroscopy
Johannes M. Richter et al.
NATURE COMMUNICATIONS (2017)
Opportunities and Future Directions for Ga2O3
Michael A. Mastro et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2017)
Effects of oxygen vacancies on the structural and optical properties of β-Ga2O3
Linpeng Dong et al.
SCIENTIFIC REPORTS (2017)
Band-to-band transitions, selection rules, effective mass, and excitonic contributions in monoclinic β-Ga2O3
Alyssa Mock et al.
PHYSICAL REVIEW B (2017)
Gallium vacancies in β-Ga2O3 crystals
B. E. Kananen et al.
APPLIED PHYSICS LETTERS (2017)
Initial process of photoluminescence dynamics of self-trapped excitons in a β-Ga2O3 single crystal
Suguru Yamaoka et al.
PHYSICAL REVIEW B (2017)
Choosing the correct hybrid for defect calculations: A case study on intrinsic carrier trapping in β-Ga2O3
Peter Deak et al.
PHYSICAL REVIEW B (2017)
Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy
Z. Zhang et al.
APPLIED PHYSICS LETTERS (2016)
High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth
Akito Kuramata et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2016)
Recent progress in Ga2O3 power devices
Masataka Higashiwaki et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2016)
Quasi-two-dimensional β-gallium oxide solar-blind photodetectors with ultrahigh responsivity
Sooyeoun Oh et al.
JOURNAL OF MATERIALS CHEMISTRY C (2016)
Doping of Ga2O3 with transition metals
H. Peelaers et al.
PHYSICAL REVIEW B (2016)
Characterization of defects in β-Ga2O3 single crystals
Katsuhiko Nakai et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2015)
High gain Ga2O3 solar-blind photodetectors realized via a carrier multiplication process
G. C. Hu et al.
OPTICS EXPRESS (2015)
Brillouin zone and band structure of β-Ga2O3
Hartwin Peelaers et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2015)
First-principles theory of nonradiative carrier capture via multiphonon emission
Audrius Alkauskas et al.
PHYSICAL REVIEW B (2014)
Czochralski-Based Growth and Characteristics of Selected Novel Single Crystals for Optical Applications
K. Shimamura et al.
ACTA PHYSICA POLONICA A (2013)
Correlation between blue luminescence intensity and resistivity in β-Ga2O3 single crystals
T. Onuma et al.
APPLIED PHYSICS LETTERS (2013)
Ab initio calculations on the defect structure of β-Ga2O3
T. Zacherle et al.
PHYSICAL REVIEW B (2013)
Temperature-dependent index of refraction of monoclinic Ga2O3 single crystal
Indranil Bhaumik et al.
APPLIED OPTICS (2011)
Oxygen vacancies and donor impurities in β-Ga2O3
J. B. Varley et al.
APPLIED PHYSICS LETTERS (2010)
Excitation and photoluminescence of pure and Si-doped β-Ga2O3 single crystals
Kiyoshi Shimamura et al.
APPLIED PHYSICS LETTERS (2008)
Growth of β-Ga2O3 Single Crystals by the Edge-Defined, Film Fed Growth Method
Hideo Aida et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2008)
Electronic and thermodynamic properties of β-Ga2O3
Haiying He et al.
APPLIED PHYSICS LETTERS (2006)
Optical spectroscopy study on β-Ga2O3
EG Víllora et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS (2002)