Journal
APPLIED PHYSICS LETTERS
Volume 113, Issue 18, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5049620
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Funding
- JSPS KAKENHI [18H03830]
- Grants-in-Aid for Scientific Research [18H03830] Funding Source: KAKEN
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Because of aggressive downscaling of the dimensions of future semiconductor devices, they will suffer from increased line resistivity and resistance-capacitance delay. In this work, NiAl thin films are investigated as a potential liner- and barrier-free interconnect material. The results show that NiAl has strong adhesion, does not undergo interdiffusion with SiO2, and has a favorable resistivity size effect. These features suggest that NiAl is a good candidate for replacing Cu as a liner- and barrier-free interconnect for linewidths below 7 nm. Published by AIP Publishing.
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